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吾爱游客
发表于 2018-8-2 11:36
1、申 请 I D:单刀赴宴会
2、个人邮箱:29674146@qq.com
3、原创技术文章:
运用silvaco仿真设计场限环隔离结构研究对击穿电压的影响
这里先说总体思路吧 一次对比环的个数,环间距,环宽对击穿电压影响。这里只介绍下建模过程 下面的研究对比就不说了
附上建模程序 本人心血啊
# (c) Silvaco Inc., 2013go athena# line x loc=0.00 spac=1.0 line x loc=95.0 spac=.5line x loc=96.0 spac=3.0line x loc=99.0 spac=.5line x loc=110.0 spac=.5line x loc=119.0 spac=.5line x loc=127.0 spac=.5line x loc=130.0 spac=3.0line x loc=133.0 spac=.5line x loc=155.0 spac=.5line x loc=163.0 spac=.5line x loc=166.0 spac=3.0line x loc=169.0 spac=.5line x loc=193.0 spac=.5line x loc=201.0 spac=.5line x loc=204.0 spac=3.0line x loc=207.0 spac=.5line x loc=233.0 spac=.5line x loc=241.0 spac=.5line x loc=244.0 spac=3.0line x loc=247.0 spac=.5line x loc=280.0 spac=.5line x loc=295.0 spac=3.0line x loc=310.0 spac=3.0line x loc=315.0 spac=3.0line x loc=335.0 spac=3.0line x loc=345.0 spac=3.0line x loc=350.0 spac=5.0 #line y loc=0.00 spac=0.1 line y loc=2.00 spac=0.5line y loc=12.0 spac=2.0line y loc=50.0 spac=5.0line y loc=120.0 spac=10.# init c.phosphor=6e13 orientation=100 space.mult=4# deposit oxide thick=2.50 dy=0.40#etch oxide left p1.x=99#etch oxide start x=127 y=-3etch oxide cont x=127 y=0etch oxide cont x=133 y=0etch oxide done x=133 y=-3#etch oxide start x=163 y=-3etch oxide cont x=163 y=0etch oxide cont x=169 y=0etch oxide done x=169 y=-3#etch oxide start x=201 y=-3etch oxide cont x=201 y=0etch oxide cont x=207 y=0etch oxide done x=207 y=-3# implant boron dose=1.0e15 energy=100 # method fermi compressdiffus time=420 temp=1100 nitro# etch oxide right p1.x=335.00#deposit poly thick=.8 dy=0.40 c.boron=1e19# etch poly left p1.x=95.00#etch poly start x=119 y=-4etch poly cont x=119 y=0etch poly cont x=130 y=0etch poly done x=130 y=-4#etch poly start x=155 y=-4etch poly cont x=155 y=0etch poly cont x=166 y=0etch poly done x=166 y=-4#etch poly start x=193 y=-4etch poly cont x=193 y=0etch poly cont x=204 y=0etch poly done x=204 y=-4#etch poly start x=233 y=-4etch poly cont x=233 y=0etch poly cont x=310 y=0etch poly done x=310 y=-4# etch poly right p1.x=345.00# deposit alumin thick=.8 dy=0.40# etch aluminum start x=110.0 y=-8.0etch aluminum cont x=110.0 y=0.0etch aluminum cont x=315.0 y=0.0etch aluminum done x=315.0 y=-8.00#electrode name=anode x=0electrode name=cathode x=350electrode name=plate1 x=150electrode name=plate2 x=180electrode name=plate3 x=220electrode name=substrate backside structure outfile=powerex05_0.str tonyplot powerex05_0.str -set powerex05_0.set# go atlas contact name=plate1 resist=1e20contact name=plate2 resist=1e20contact name=plate3 resist=1e20models bipolar print impact selboutput e.field method newton trap maxtraps=10solve init log outf=powerex05_1.logsolve vanode=-1 vstep=-1 vfinal=-5 name=anode solve vanode=-5 vstep=-5 vfinal=-25 name=anode solve vanode=-25 vstep=-25 vfinal=-900 name=anodesave outf=powerex05_2.str tonyplot powerex05_1.log -set powerex05_1.settonyplot powerex05_2.str -set powerex05_2.setquit
这里是3个环时候的基础数据 下一组只需修改个别参数就可以了
这是结果图
到这里建模就完成了
下面只需要对比研究就可以了 就不继续赘述了
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